Electron Diode

Electron DiodeElectron Diode
  1. Investigation of plasma drift velocity vs time in intense electron beam diode

    强流脉冲电子束二极管等离子体漂移速度的研究

  2. Approximate analytic solution of coaxial intensive electron beam diode

    同轴型强流电子束二极管的一种解析近似

  3. Research on Multi-pulsed High Intense Electron Vacuum Diode

    多脉冲强流真空电子二极管研究

  4. The insulating characteristics of insulator and MITL of short-pulse high-impedance intense electron beam diode were analyzed in detail .

    分析了短脉冲γ射线源二极管的管绝缘体和真空磁绝缘传输线的结构与绝缘性能;

  5. The concept of critical working voltage ( CWV ) was proposed and the scaling law of CWV versus plasma density from 10 11 up to 10 13 cm - 3 was developed for an intensive electron beam diode .

    提出了临界工作电压的概念,并获得了等离子体密度在1011至1013cm-3范围内变化、负载为强流电子束二极管时临界工作电压与等离子体密度的定标关系。

  6. Critical Magnetization Current in the Measurement of Charge-mass Ratio of Electron Using Ideal Diode

    用理想二极管测定电子荷质比中的临界磁化电流

  7. An intense pulsed electron beam with diode voltage of 500 kV , current of 50 kA , and pulsewidth of 50 ns can be produced by this accelerator .

    经过初步调试,该加速器可以产生电压500kV,电流50kA,脉冲宽度50ns的强流电子束。

  8. Effect of Faraday cup impedance on electron beam current of diode

    法拉第筒阻抗对二极管电子束流性能的影响

  9. Image intensifier with transmitted secondary electron multiplication Step recovery diode frequency multiplier

    阶跃恢复二极管倍频器二次发射电子倍增管

  10. The investigation on the electron emission from a diode with ferroelectric cathode

    铁电阴极二极管电子发射研究

  11. Influence of the geometric parameter of the ferroelectric cathode on the electron emission from a diode

    铁电阴极几何参数对二极管电子发射的影响

  12. Three phases electron beam flow model for low-impedance intense-current pinched electron beam diode

    低阻抗强流箍缩电子束二极管的3阶段电子束流模型